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Manufacturer Product Number:
IPD16CN10N G
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IPD16CN10N G-DG
Description:
MOSFET N-CH 100V 53A TO252-3
Detailed Description:
N-Channel 100 V 53A (Tc) 100W (Tc) Surface Mount PG-TO252-3
Inventory:
RFQ Online
12801090
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IPD16CN10N G Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
-
Series
OptiMOS™
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
53A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
16mOhm @ 53A, 10V
Vgs(th) (Max) @ Id
4V @ 61µA
Gate Charge (Qg) (Max) @ Vgs
48 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3220 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
100W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
IPD16C
Datasheet & Documents
Datasheets
IPD16CN10N G
Additional Information
Other Names
IPD16CN10N G-DG
IPD16CN10NG
SP000096454
Standard Package
2,500
Environmental & Export Classification
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
FDD86102LZ
MANUFACTURER
onsemi
QUANTITY AVAILABLE
20852
DiGi PART NUMBER
FDD86102LZ-DG
UNIT PRICE
0.62
SUBSTITUTE TYPE
MFR Recommended
DIGI Certification
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